creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308022 version: l13 operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle typical thermal resistance 4 ma 20 15 voltage rate of change (rated v r ) 10000 10 maximum reverse current @ rated vr t j =25 t j =125 i r 0.2 maximum instantaneous forward voltage (note 2) i f =15a, t j =25 i f =15a, t j =125 i f =30a, t j =25 i f =30a, t j =125 v f v 0.70 0.75 0.84 0.95 0.82 0.90 0.94 1.05 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse surge current (note 1) i frm 30 0.73 0.78 0.82 0.92 0.60 0.65 0.70 0.80 mbrf 30200 ct unit maximum repetitive peak reverse voltage maximum rms voltage 10.5 maximum dc blocking voltage maximum average forward rectified current 30 peak repetitive forward current (rated vr, square wave, 20khz) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbrf 3035 ct mbrf 3045 ct mbrf 3050 ct mbrf 3060 ct mbrf 3090 ct mbrf 30100 ct mbrf 30150 ct ito-220ab mechanical data case: ito-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) mbrf3035ct thru mbrf30200ct taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec
part no. part no. mbrf3060ct mbrf3060ct mbrf3060ct (ta=25 unless otherwise noted) document number: ds_d1308022 version: l13 mbrf3060cthc0 h c0 aec-q101 qualified ratings and characteristics curves mbrf3060ct c0 c0 mbrf3060ct c0g c0 g green compound example preferred p/n aec-q101 qualified packing code green compound code description prefix "h" c0 suffix "g" ito-220ab 50 / tube note 1: "xx" defines voltage from 35v (mbrf3035ct) to 200v (mbrf30200ct) mbrf3035ct thru mbrf30200ct taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing mbrf30xxct (note 1) 0 5 10 15 20 25 30 35 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 50 75 100 125 150 175 200 225 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 mbrf3035ct - 3045ct mbrf3050ct - 30200ct tj=25 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle mbrf3035ct-3045ct mbrf3050ct-3060ct mbrf3090ct-30100ct mbrf30150ct-30200ct
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1308022 version: l13 marking diagram mbrf3035ct thru mbrf30200ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p mbrf3035ct - 3045ct mbrf3050ct - 3060ct mbrf3090ct - 30200ct 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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